编码ABM8AIG-16.000MHZ-12-2-T3是一款3225mm四脚无源晶振专属于激光雷达

编码ABM8AIG-16.000MHZ-12-2-T3是一款3225mm四脚无源晶振专属于激光雷达，美国Abracon晶振公司作为领先者，一直走在技术的最前沿，通过多年的拼搏，拥有先进的生产技术以及高端的生产设备，并针对市场推出高性价比的无源晶振，3225mm四脚贴片晶振，编码ABM8AIG-16.000MHZ-12-2-T3，AEC-Q200合格，汽车等级1:-40°C至+125°C，汽车等级0:-40°C至+150°C(可根据要求提供)，TS16949生产线认证，可根据要求提供PPAP，密封陶瓷包装，符合RoHS/RoHS II，无铅，信息娱乐系统，无钥匙进入和启动，GPS和导航，舒适控制ADAS(高级驾驶辅助系统)，车对车通信，激光雷达(光探测和测距)车载网络，动力总成和驱动控制，电源控制和转换，工业控制与自动化。

编码ABM8AIG-16.000MHZ-12-2-T3是一款3225mm四脚无源晶振专属于激光雷达，测量电路内SMD晶体的性能可以将未知转化为已知，从而消除这个问题。描述完整的频率选择网络，包括板寄生最小化不确定性和最大限度地提高长期系统可靠性的信心。

Manufacturer Part Number 原厂编码	Manufacturer厂家	Series型号	3225晶振	Frequency频率	Package / Case包装/封装
ABM8AIG-14.31818MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	14.31818MHz	4-SMD, No Lead
ABM8AIG-14.7456MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	14.7456MHz	4-SMD, No Lead
ABM8AIG-16.000MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	16MHz	4-SMD, No Lead
ABM8AIG-16.384MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	16.384MHz	4-SMD, No Lead
ABM8AIG-18.432MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	18.432MHz	4-SMD, No Lead
ABM8AIG-19.6608MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	19.6608MHz	4-SMD, No Lead
ABM8AIG-20.000MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	20MHz	4-SMD, No Lead
ABM8AIG-22.1184MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	22.1184MHz	4-SMD, No Lead
ABM8AIG-24.000MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	24MHz	4-SMD, No Lead
ABM8AIG-24.576MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	24.576MHz	4-SMD, No Lead
ABM8AIG-25.000MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	25MHz	4-SMD, No Lead
ABM8AIG-26.000MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	26MHz	4-SMD, No Lead
ABM8AIG-27.000MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	27MHz	4-SMD, No Lead
ABM8AIG-28.63636MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	28.63636MHz	4-SMD, No Lead
ABM8AIG-30.000MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	30MHz	4-SMD, No Lead
ABM8AIG-32.000MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	32MHz	4-SMD, No Lead
ABM8AIG-33.000MHZ-12-2-T3	Abracon晶振	ABM8AIG	MHz Crystal	33MHz	4-SMD, No Lead

这些参数包括振荡器环路的频率精度、晶体看到的驱动电平和振荡器的闭环增益裕度。

振荡器环路振荡的频率应尽可能接近晶体的指定载频。如果在频域上偏离系统边界条件太远，可能会导致系统故障或失效。
为了达到所需的频率精度，石英晶体必须看到等效于晶体制造时的电镀电容设置的电路电容，如10pF, 12pF, 18pF等。

挑战在于大多数MCU数据表没有清楚地列出Cin和Cout的期望值;尽管它们在最终振荡频率中起着关键作用。限流电阻很少被使用，因为大多数MCU嵌入式振荡器回路不会对晶体产生过多的驱动。

easuring in-circuit crystal performance eliminates the problem by converting the unknowns into well knowns. Characterizing the complete frequencyselective network including board parasitics minimizes uncertainty and maximizes confidence in long term system reliability. These parameters include frequency accuracy of the oscillator loop, drive level seen by the crystal, and the closed-loop Gain Margin of the oscillator. The frequency at which the oscillator loop is oscillating should be as close as possible to the specified carrier frequency of the crystal. Deviating too far from the system’s boundary condition in frequency domain may result in system fault or failure. To achieve desired frequency accuracy, the crystal must see in-circuit capacitance equivalent to the plating capacitance set when the crystal was manufactured, such as 10pF, 12pF, 18pF, etc. The challenge lies in the fact that most MCU datasheets do not clearly outline the expected values for Cin and Cout; even though they play a critical role in the final oscillation frequency. The current limiting resistor is rarely engaged, since most MCU embedded oscillator loops do not present excessive drive to the crystal.