X1G0042010006,TG-5006CE系列晶振,日产爱普生进口晶振

产品简介

X1G0042010006,TG-5006CE系列晶振,日产爱普生进口晶振，物料编码为X1G0042010006，型号为TG-5006CE系列晶振，频率为16.367667MHz，输出为Clipped sine wave，电压范围为1.7V-1.9V，精度为±2ppm，工作温度范围为-30℃~85℃，日产爱普生进口晶振，3225贴片晶振，3225振荡器，3225温补晶振，晶振厂家，石英晶振，四脚晶振，有源晶振，SMD晶振，爱普生晶体，特点：轻型，小型，薄型，高精度，高品质，高性能等，被广泛应用在汽车显示系统，汽车控制系统，汽车安全系统等产品。

产品详情

EP-2

X1G0042010006,TG-5006CE系列晶振,日产爱普生进口晶振

参数表
型号	TG-5006CE
频率	16.367667 MHz
精度	±2ppm
输出	Clipped sine wave
工作温度	-30℃-85℃
电压	3.2*2.5mm

EP-3

X1G0042010006,TG-5006CE系列晶振,日产爱普生进口晶振

TG-5006CE CG CJ

物料编码	型号	频率	有源晶振	输出	电压	精度	工作温度
X1G0042010006	TG-5006CE	16.367667 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	1.700 to 1.900 V	+/-2.0 ppm	-30 to +85 °C
X1G0042010008	TG-5006CE	16.369000 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	1.700 to 3.300 V	+/-2.0 ppm	-30 to +85 °C
X1G0042010010	TG-5006CE	26.000000 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	1.700 to 3.300 V	+/-2.0 ppm	-30 to +85 °C
X1G0042010013	TG-5006CE	16.367667 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	1.700 to 3.300 V	+/-2.0 ppm	-30 to +85 °C
X1G0042010017	TG-5006CE	26.000000 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	1.700 to 3.300 V	+/-2.0 ppm	-30 to +85 °C
X1G0042010020	TG-5006CE	26.000000 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	2.660 to 2.940 V	+/-2.0 ppm	-30 to +85 °C
X1G0042010023	TG-5006CE	26.000000 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	1.700 to 3.465 V	+/-2.0 ppm	-30 to +85 °C
X1G0042010025	TG-5006CE	32.000000 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	1.700 to 3.300 V	+/-2.0 ppm	-30 to +85 °C
X1G0042010026	TG-5006CE	26.000000 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	2.660 to 2.940 V	+/-2.0 ppm	-30 to +85 °C
X1G0042010032	TG-5006CE	20.000000 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	3.135 to 3.465 V	+/-2.0 ppm	-30 to +85 °C
X1G0042010009	TG-5006CE	19.200000 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	2.850 to 3.150 V	+/-2.0 ppm	-30 to +85 °C
X1G0042010033	TG-5006CE	25.000000 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	2.850 to 3.150 V	+/-2.0 ppm	-30 to +85 °C
X1G0042010062	TG-5006CE	32.000000 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	2.850 to 3.150 V	+/-2.0 ppm	-30 to +85 °C
X1G0042010063	TG-5006CE	16.000000 MHz	3.20 x 2.50 x 0.90 mm	Clipped sine wave	1.710 to 1.890 V	+/-2.0 ppm	-30 to +85 °C
X1G0051610002	TG2520CEN	25.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	2.375 to 3.630 V	+/-2.0 ppm	-40 to ++85 °C
X1G0051610007	TG2520CEN	32.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	2.500 to 3.300 V	+/-2.0 ppm	-40 to ++85 °C
X1G0051610009	TG2520CEN	27.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	2.375 to 3.630 V	+/-2.0 ppm	-40 to ++85 °C
X1G0051610011	TG2520CEN	16.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	2.500 to 3.300 V	+/-2.0 ppm	-40 to ++85 °C
X1G0051610012	TG2520CEN	25.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	2.375 to 3.630 V	+/-2.0 ppm	-40 to ++85 °C
X1G0051610013	TG2520CEN	48.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	3.000 to 3.600 V	+/-2.0 ppm	-40 to ++85 °C
X1G0051610014	TG2520CEN	20.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	2.375 to 3.630 V	+/-2.0 ppm	-40 to ++85 °C
X1G0051610015	TG2520CEN	26.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	2.375 to 3.630 V	+/-2.0 ppm	-40 to ++85 °C
X1G0051610019	TG2520CEN	38.400000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	2.375 to 3.630 V	+/-2.0 ppm	-40 to ++85 °C
X1G0051610022	TG2520CEN	12.288000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	2.375 to 3.630 V	+/-2.0 ppm	-40 to ++85 °C
X1G0051610023	TG2520CEN	12.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	2.375 to 3.630 V	+/-2.0 ppm	-40 to ++85 °C
X1G0051610025	TG2520CEN	40.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	2.375 to 3.630 V	+/-2.0 ppm	-40 to ++85 °C