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EPSON差分振荡器SG2520VHN,6G路由器晶振,X1G0059410009

EPSON差分振荡器SG2520VHN,6G路由器晶振,X1G0059410009EPSON差分振荡器SG2520VHN,6G路由器晶振,X1G0059410009

产品简介

EPSON差分振荡器SG2520VHN,6G路由器晶振,X1G0059410009,尺寸2.50x2.00x0.84mm,频率156.25MHz,输出逻辑LVDS,差分晶体振荡器,OSC差分晶振,LVDS输出晶振,低电压差分晶振,低损耗差分晶振,LVDS晶振,低抖动差分晶振,高性能差分晶振,低相噪差分晶振,路由器差分晶振,交换机差分晶振,测试测量差分晶振,产品主要应用范围广泛,包含网络设备(路由器、交换机、光模块等),数据中心,测试和测量设备,工厂自动化,高速转换器,如ADC和DAC等领域。
6G将使网络通信流量呈指数级增长。6G通信网络要求高速宽频带,同时把噪音降到最低。这可以通过高频率,用于通信设备的低抖动参考时钟。光通信模块为400gbps /800gbps传输超过80公里需要一个小的外形因素,±20 × 10-6的稳定性参考时钟。SG2016VHN/SG2520VHN差分晶体振荡器是非常受欢迎的SG3225VEN系列的下一代产品具有广泛的可用频率范围,低抖动和改进的频率容限的功能组合由于采用了内部设计的具有温度补偿的集成电路,其封装尺寸缩小了63%。EPSON差分振荡器SG2520VHN,6G路由器晶振,X1G0059410009.

产品详情

EPSON差分振荡器SG2520VHN,6G路由器晶振,X1G0059410009,尺寸2.50x2.00x0.84mm,频率156.25MHz,输出逻辑LVDS,差分晶体振荡器,OSC差分晶振,LVDS输出晶振,低电压差分晶振,低损耗差分晶振,LVDS晶振,低抖动差分晶振,高性能差分晶振,低相噪差分晶振,路由器差分晶振,交换机差分晶振,测试测量差分晶振,产品主要应用范围广泛,包含网络设备(路由器、交换机、光模块等),数据中心,测试和测量设备,工厂自动化,高速转换器,如ADC和DAC等领域。
6G将使网络通信流量呈指数级增长。6G通信网络要求高速宽频带,同时把噪音降到最低。这可以通过高频率,用于通信设备的低抖动参考时钟。光通信模块为400gbps /800gbps传输超过80公里需要一个小的外形因素,±20 × 10-6的稳定性参考时钟。SG2016VHN/SG2520VHN差分晶体振荡器是非常受欢迎的SG3225VEN系列的下一代产品具有广泛的可用频率范围,低抖动和改进的频率容限的功能组合由于采用了内部设计的具有温度补偿的集成电路,其封装尺寸缩小了63%。EPSON差分振荡器SG2520VHN,6G路由器晶振,X1G0059410009.耐振低频进口谐振器,大型7050mm贴片晶体,CX5晶振

EPSON差分振荡器SG2520VHN,6G路由器晶振,X1G0059410009参数表

Parameter Symbol Specification Unit Conditions
Min. Typ. Max.
Maximum supply voltage VCC -0.3 - 4.0 V
Input voltage Vin -0.3 - VCC+ 0.5 V 一一
OE/ST terminal
Storage temperature range T_stg -55 - +125 °C
Parameter Symbol Specification Unit Conditions
Min. Typ. Max.
Supply voltage VCC 1.71 1.8 1.89 V Suffix: E, Output option: A or C
2.375 2.5 2.625 V Suffix: D
3.135 3.3 3.465 V Suffix: C
Supply voltage GND 0.0 0.0 0.0 V
Operating temperature range T_use -40 +25 +85 °C Suffix: G
-40 +25 +105 °C Suffix: H
LVDS load condition L_LVDS 100 Ω
Parameter Symbol Specification Unit Conditions
Min. Typ. Max.
Output frequency *1 fo 25 - 500 MHz
Frequency tolerance *2 f_tol -20 - +20 ×10-6 Suffix: C
Parameter Symbol Specification Unit Conditions
Min. Typ. Max.
Startup time t_str - - 10 ms t = 0 at 90 % VCC
Current consumption ICC - - 25 mA Output option: A, fo < 212 MHz
VCC= 2.5 V, 3.3 V Typ.
- - 28 mA Output option: A, fo≥212 MHz
VCC= 2.5 V, 3.3 V Typ.
- - 30 mA Output option: B, fo < 212 MHz
VCC= 2.5 V, 3.3 V Typ.
- - 35 mA Output option: B, fo≥212 MHz
VCC= 2.5 V, 3.3 V Typ.
- - 25 mA Output option: C, fo < 212 MHz
VCC= 2.5 V, 3.3 V Typ.
- - 28 mA Output option: C,
212 MHz≤fo < 392 MHz
VCC= 2.5 V, 3.3 V Typ.
- - 30 mA Output option: C, fo≥392 MHz
VCC= 2.5 V, 3.3 V Typ.
- - 25 mA Output option: A or C
VCC= 1.8 V Typ.
Disable current I_dis - - 20 mA OE = GND
Stand-by current I_std - - 30 μA = GND, T_use Max. = +85 °C
- - 60 μA = GND, T_use Max. = +105 °C
Rise time / Fall time tr / tf - - 0.35 ns 20 % - 80 % of VSW
Symmetry SYM 45 50 55 % At output crossing point
Output voltage VOD 250 - 450 mV Output option: A
400 - 800 mV Output option: B
Not available for VCC= 1.8 V Typ.
300 - 600 mV Output option: C
dVOD - - 50 mV |VOD1- VOD2|
VOS 1.15 - 1.35 V VCC= 2.5 V, 3.3 V Typ.
0.65 - 0.85 V VCC= 1.8 V Typ.
dVOS - - 50 mV |VOS1- VOS2|
Differential swing VSW 500 - 900 mV Output option: A
800 - 1 600 mV Output option: B
Not available for VCC= 1.8 V Typ.
600 - 1 200 mV Output option: C
Input voltage VIH 70 % VCC - - V OE/terminal
VIL - - 30 % VCC V
Output disable time (OE) tstp_oe - - 100 ns Measured from the time OE
pin crosses 30 % VCC
Output disable time (ST) tstp_st - - 100 ns Measured from the time
pin crosses 30 % VCC
Output enable time (OE) tsta_oe - - 500 ns Measured from the time OE
pin crosses 70 % VCC
Output enable time (ST) tsta_st - - 10 ms Measured from the time
pin crosses 70 % VCC
Phase jitter
VCC= 2.5 V, 3.3 V Typ.
Offset frequency
fo < 50 MHz; 12 kHz to 5 MHz
fo≥50 MHz: 12 kHz to 20 MHz
tPJ - - 250 fs fo < 100 MHz
- - 100 fs 100 MHz≤fo≤156 MHz
- - 60 fs 156 MHz < fo≤212 MHz
- - 50 fs fo > 212 MHz
Phase jitter
VCC= 1.8 V Typ.
Offset frequency
fo < 50 MHz: 12 kHz to 5 MHz
fo≥50 MHz: 12 kHz to 20 MHz
- - 400 fs fo < 100 MHz
- - 130 fs 100 MHz≤fo≤156 MHz
- - 70 fs 156 MHz < fo≤212 MHz
- - 60 fs fo > 212 MHz
耐振低频进口谐振器,大型7050mm贴片晶体,CX5晶振

EPSON差分振荡器SG2520VHN,6G路由器晶振,X1G0059410009尺寸图SG2016VHN SG2520VHN 4

产品特性:

石英晶体振荡器(SPXO)

频率范围(fo): 25MHz至500MHz

输出:LVDS

电源电压:1.8 V型。/ 2.5 V/ 3.3 V类型

工作温度:-40℃~ +105℃

频率公差:±20 × 10-6

低相位抖动:38fs(fo = 156.25MHz)SG2016VHN SG2520VHN 1

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X1M0004210003 爱普生晶振 MG7050VAN 156.250000 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.970 to 3.630 V 0 to 70 °C
X1M0004210004 爱普生晶振 MG7050VAN 125.000000 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.375 to 2.625 V -20 to 70 °C
X1M0004210005 爱普生晶振 MG7050VAN 644.531250 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.375 to 2.625 V -20 to 70 °C
X1M0004210006 爱普生晶振 MG7050VAN 322.265625 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.375 to 2.625 V -20 to 70 °C
X1M0004210007 爱普生晶振 MG7050VAN 156.250000 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.970 to 3.630 V -5 to 85 °C
X1M0004210008 爱普生晶振 MG7050VAN 100.000000 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.970 to 3.630 V -5 to 85 °C
X1M0004210009 爱普生晶振 MG7050VAN 100.000000 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.970 to 3.630 V -5 to 85 °C
X1M0004210010 爱普生晶振 MG7050VAN 125.000000 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.970 to 3.630 V -5 to 85 °C
X1M0004210011 爱普生晶振 MG7050VAN 125.000000 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.970 to 3.630 V -5 to 85 °C
X1M0004210012 爱普生晶振 MG7050VAN 156.250000 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.970 to 3.630 V -5 to 85 °C
X1M0004210013 爱普生晶振 MG7050VAN 200.000000 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.970 to 3.630 V -5 to 85 °C
X1M0004210014 爱普生晶振 MG7050VAN 200.000000 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.970 to 3.630 V -5 to 85 °C
X1M0004210015 爱普生晶振 MG7050VAN 322.265625 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.970 to 3.630 V 0 to 70 °C
X1M0004210016 爱普生晶振 MG7050VAN 125.000000 MHz 7.00 x 5.00 x 1.60 mm LVDS 2.375 to 2.625 V -5 to 85 °C
X1G0059010001 爱普生晶振 SG2520VGN 156.250000 MHz 2.50 x 2.00 x 0.84 mm LVDS 3.135 to 3.465 V -40 to 85 °C
X1G0059010002 爱普生晶振 SG2520VGN 156.250000 MHz 2.50 x 2.00 x 0.84 mm LVDS 1.710 to 1.890 V -40 to 85 °C
X1G0059010003 爱普生晶振 SG2520VGN 156.250000 MHz 2.50 x 2.00 x 0.84 mm LVDS 2.375 to 2.625 V -40 to 85 °C
X1G0059010004 爱普生晶振 SG2520VGN 156.250000 MHz 2.50 x 2.00 x 0.84 mm LVDS 3.135 to 3.465 V -40 to 105 °C
X1G0059010006 爱普生晶振 SG2520VGN 156.250000 MHz 2.50 x 2.00 x 0.84 mm LVDS 2.375 to 2.625 V -40 to 85 °C
X1G0059010007 爱普生晶振 SG2520VGN 156.250000 MHz 2.50 x 2.00 x 0.84 mm LVDS 1.710 to 1.890 V -40 to 105 °C
X1G0059010008 爱普生晶振 SG2520VGN 156.250000 MHz 2.50 x 2.00 x 0.84 mm LVDS 2.375 to 2.625 V -40 to 105 °C
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X1G0059410002 爱普生晶振 SG2520VHN 156.250000 MHz 2.50 x 2.00 x 0.84 mm LVDS 2.375 to 2.625 V -40 to 85 °C
X1G0059410003 爱普生晶振 SG2520VHN 156.250000 MHz 2.50 x 2.00 x 0.84 mm LVDS 1.710 to 1.890 V -40 to 105 °C
X1G0059410004 爱普生晶振 SG2520VHN 156.250000 MHz 2.50 x 2.00 x 0.84 mm LVDS 1.710 to 1.890 V -40 to 85 °C
X1G0059410005 爱普生晶振 SG2520VHN 156.250000 MHz 2.50 x 2.00 x 0.84 mm LVDS 3.135 to 3.465 V -40 to 105 °C
X1G0059410006 爱普生晶振 SG2520VHN 155.520000 MHz 2.50 x 2.00 x 0.84 mm LVDS 3.135 to 3.465 V -40 to 85 °C
X1G0059410007 爱普生晶振 SG2520VHN 156.250000 MHz 2.50 x 2.00 x 0.84 mm LVDS 1.710 to 1.890 V -40 to 85 °C
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耐振低频进口谐振器,大型7050mm贴片晶体,CX5晶振

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