510ABA106M250BAGR Silicon芯科晶振 6G电信晶振 Si510差分振荡器

510ABA106M250BAGR Silicon芯科晶振 6G电信晶振 Si510差分振荡器,尺寸5.0*3.2mm,频率106.25MHZ，输出逻辑LVPECL,电压3.3V,频率稳定性25ppm,XO时钟振荡器（标准），LV-PECL输出晶振，有源差分晶振，差分晶体振荡器，6GWIFI差分晶振，低电压差分振荡器，低抖动差分晶振，低耗能差分晶振，高性能差分晶振，仪器设备差分晶振，6G光模块差分晶振，无线网络差分振荡器，网络设备专用差分晶振，OSC差分晶振，有源差分晶振，贴片型差分振荡器.

差分晶振产品具有低抖动低电压的特点，主要应用范围SONET/SDH/OTN网络，千兆以太网，光纤通道/SAS/SATA，PCI Express总线，3G-SDI/HD-SDI/SDI，电信，交换机/路由器，FPGA/ASIC时钟生成等领域.510ABA106M250BAGR Silicon芯科晶振 6G电信晶振 Si510差分振荡器.

510ABA106M250BAGR Silicon芯科晶振 6G电信晶振 Si510差分振荡器参数表

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Supply Voltage	VDD	3.3 V option	2.97	3.3	3.63	V
		2.5 V option	2.25	2.5	2.75	V
		1.8 V option	1.71	1.8	1.89	V
Supply Current	IDD	CMOS, 100 MHz, single-ended	—	21	26	mA
		LVDS (output enabled)	—	19	23	mA
		LVPECL (output enabled)	—	39	43	mA
		HCSL (output enabled)	—	41	44	mA
		Tristate (output disabled)	—	—	18	mA
OE "1" Setting	VIH	See Note	0.80 x VDD	—	—	V
OE "0" Setting	VIL	See Note	—	—	0.20 x VDD	V
OE Internal Pull-Up/Pull- Down Resistor*	RI		—	45	—	kΩ
Operating Temperature	TA		–40	—	85	oC

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Nominal Frequency

CMOS, Dual CMOS

0.1

—

212.5

MHz

LVDS/LVPECL/HCSL

0.1

—

250

MHz

Total Stability*

Frequency Stability Grade C

–30

—

+30

ppm

Frequency Stability Grade B

–50

—

+50

ppm

Frequency Stability Grade A

–100

—

+100

ppm

Temperature Stability

Frequency Stability Grade C

–20

—

+20

ppm

Frequency Stability Grade B

–25

—

+25

ppm

Frequency Stability Grade A

–50

—

+50

ppm

Startup Time

TSU

Minimum VDDuntil output
frequency (FO) within specification

—

Disable Time

FO> 10 MHz

—

µs

FO< 10 MHz

—

µs

Enable Time

FO> 10 MHz

—

µs

FO< 10 MHz

—

µs

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
CMOS Output Logic High	VOH		0.85 x VDD	—	—	V
CMOS Output Logic Low	VOL		—	—	0.15 x VDD	V
CMOS Output Logic High Drive	IOH	3.3 V	–8	—	—	mA
		2.5 V	–6	—	—	mA
		1.8 V	–4	—	—	mA
CMOS Output Logic Low Drive	IOL	3.3 V	8	—	—	mA
		2.5 V	6	—	—	mA
		1.8 V	4	—	—	mA
CMOS Output Rise/Fall Time (20 to 80% VDD)	TR/TF	0.1 to 212.5 MHz, CL= 15 pF	0.45	0.8	1.2	ns
		0.1 to 212.5 MHz, CL= no load	0.3	0.6	0.9	ns
LVPECL Output Rise/Fall Time (20 to 80% VDD)	TR/TF		100	—	565	ps
HCSL Output Rise/Fall Time (20 to 80% VDD)	TR/TF		100	—	470	ps
LVDS Output Rise/Fall Time (20 to 80% VDD)	TR/TF		350	—	800	ps
LVPECL Output Common Mode	VOC	50 Ω to VDD– 2 V, single-ended	—	VDD– 1.4 V	—	V
LVPECL Output Swing	VO	50 Ω to VDD– 2 V, single-ended	0.55	0.8	0.90	VPPSE
LVDS Output Common Mode	VOC	100 Ω line-line VDD= 3.3/2.5 V	1.13	1.23	1.33	V
		100 Ω line-line, VDD= 1.8 V	0.83	0.92	1.00	V
LVDS Output Swing	VO	Single-ended, 100 Ω differential termination	0.25	0.35	0.45	VPPSE
HCSL Output Common Mode	VOC	50 Ω to ground	0.35	0.38	0.42	V
HCSL Output Swing	VO	Single-ended	0.58	0.73	0.85	VPPSE
Duty Cycle	DC	All formats	48	50	52	%

510ABA106M250BAGR Silicon芯科晶振 6G电信晶振 Si510差分振荡器尺寸图

SMD振荡器产品特性：

支持以下任何频率

100kHz至250MHz

DLD 片内LDO电源调节器

电源噪声滤波 3.3、2.5或1.8 V工作电压

差异(LVPECL，LVDS， HCSL)或CMOS输出选项可选集成1:2 CMOS

扇出缓冲器

OE上的不良抑制和通电

行业标准5 x 7、3.2 x 5、和2.5 x 3.2毫米封装

无铅，符合RoHS标准

–40至85摄氏度操作

更多相关Silicon晶振型号

Manufacturer Part Number原厂代码	Manufacturer品牌	Series型号	Frequency 频率	Voltage - Supply电压	Frequency Stability频率稳定度
510GBA100M000AAG	Silicon Labs	*	-	-	-
510GBA125M000AAG	Silicon Labs	*	-	-	-
510ABA100M000BAGR	Silicon Labs	Si510	100MHz	3.3V	±25ppm
510ABA125M000BAGR	Silicon Labs	Si510	125MHz	3.3V	±25ppm
510BBA100M000BAGR	Silicon Labs	Si510	100MHz	3.3V	±25ppm
510BBA125M000BAGR	Silicon Labs	Si510	125MHz	3.3V	±25ppm
510FBA100M000BAGR	Silicon Labs	Si510	100MHz	2.5V	±25ppm
510FBA125M000BAGR	Silicon Labs	Si510	125MHz	2.5V	±25ppm
511ABA100M000BAGR	Silicon Labs	Si511	100MHz	3.3V	±25ppm
511ABA125M000BAGR	Silicon Labs	Si511	125MHz	3.3V	±25ppm
511BBA100M000BAGR	Silicon Labs	Si511	100MHz	3.3V	±25ppm
511BBA125M000BAGR	Silicon Labs	Si511	125MHz	3.3V	±25ppm
511FBA100M000BAGR	Silicon Labs	Si511	100MHz	2.5V	±25ppm
511FBA125M000BAGR	Silicon Labs	Si511	125MHz	2.5V	±25ppm
510ABA106M250BAGR	Silicon Labs	Si510	106.25MHz	3.3V	±25ppm
510BBA106M250BAGR	Silicon Labs	Si510	106.25MHz	3.3V	±25ppm
511ABA106M250BAGR	Silicon Labs	Si511	106.25MHz	3.3V	±25ppm
511BBA106M250BAGR	Silicon Labs	Si511	106.25MHz	3.3V	±25ppm
511FBA106M250BAGR	Silicon Labs	Si511	106.25MHz	2.5V	±25ppm
510ABA000149BAGR	Silicon Labs	Si510	74.175824MHz	3.3V	±25ppm
510ABA74M2500BAGR	Silicon Labs	Si510	74.25MHz	3.3V	±25ppm
510BBA000149BAGR	Silicon Labs	Si510	74.175824MHz	3.3V	±25ppm
510BBA74M2500BAGR	Silicon Labs	Si510	74.25MHz	3.3V	±25ppm
510FBA000149BAGR	Silicon Labs	Si510	74.175824MHz	2.5V	±25ppm
510FBA74M2500BAGR	Silicon Labs	Si510	74.25MHz	2.5V	±25ppm
511ABA000149BAGR	Silicon Labs	Si511	74.175824MHz	3.3V	±25ppm
511ABA74M2500BAGR	Silicon Labs	Si511	74.25MHz	3.3V	±25ppm
511BBA000149BAGR	Silicon Labs	Si511	74.175824MHz	3.3V	±25ppm
511BBA74M2500BAGR	Silicon Labs	Si511	74.25MHz	3.3V	±25ppm
511FBA000149BAGR	Silicon Labs	Si511	74.175824MHz	2.5V	±25ppm
511FBA74M2500BAGR	Silicon Labs	Si511	74.25MHz	2.5V	±25ppm
510CBA156M250BAG	Silicon Labs	*	-	-	-
510GBA156M250BAG	Silicon Labs	*	-	-	-
510CBA156M250AAG	Silicon Labs	*	-	-	-
510GBA156M250AAG	SiliconCrystal	*	-	-	-
510ABA100M000AAGR	Silicon Labs	Si510	100MHz	3.3V	±25ppm
510ABA125M000AAGR	Silicon Labs	Si510	125MHz	3.3V	±25ppm
510BBA100M000AAGR	Silicon Labs	Si510	100MHz	3.3V	±25ppm
510BBA125M000AAGR	Silicon Labs	Si510	125MHz	3.3V	±25ppm
510FBA100M000AAGR	Silicon Labs	Si510	100MHz	2.5V	±25ppm
510FBA125M000AAGR	Silicon Labs	Si510	125MHz	2.5V	±25ppm
511ABA100M000AAGR	Silicon Labs	Si511	100MHz	3.3V	±25ppm
511ABA125M000AAGR	Silicon Labs	Si511	125MHz	3.3V	±25ppm
511BBA100M000AAGR	Silicon Labs	Si511	100MHz	3.3V	±25ppm
511BBA125M000AAGR	Silicon Labs	Si511	125MHz	3.3V	±25ppm
511FBA100M000AAGR	Silicon Labs	Si511	100MHz	2.5V	±25ppm
511FBA125M000AAGR	Silicon Labs	Si511	125MHz	2.5V	±25ppm

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