Diodes recognizes that semiconductor manufacturing is an energy-intensive process with the majority of our energy being consumed within our wafer fabrication and assembly and test facilities. We are committed to lowering climate risks related to our global carbon footprint by applying responsible energy management, driving energy efficiency, and pursuing reduction of energy use at the manufacturing sites and office buildings we occupy worldwide.

百利通亚陶认识到半导体制造,研发精密的SMD晶振是一个能源密集型的过程我们的大部分能量消耗在晶圆制造、组装和测试过程中设施。我们致力于通过以下方式降低与全球碳足迹相关的气候风险应用负责任的能源管理，推动能源效率，并追求减少我们在世界各地的生产基地和办公大楼的能源使用情况。风靡一时的Diodes谐振器FL400WFQA1,为何能留下不可磨灭的记忆?ECERA无源晶振

FW2500025Z	Diodes晶振	SaRonix-eCera™ FW	MHz Crystal	25MHz	±30ppm
G43270018	Diodes晶振	SaRonix-eCera™ G4	kHz Crystal (Tuning Fork)	32.768kHz	-
G43270018	Diodes晶振	SaRonix-eCera™ G4	kHz Crystal (Tuning Fork)	32.768kHz	-
G43270018	Diodes晶振	SaRonix-eCera™ G4	kHz Crystal (Tuning Fork)	32.768kHz	-
FL374WFBR2	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	37.4MHz	±10ppm
FL374WFBR2	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	37.4MHz	±10ppm
FL374WFBR2	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	37.4MHz	±10ppm
G13270007	Diodes晶振	SaRonix-eCera™ G1	kHz Crystal (Tuning Fork)	32.768kHz	-
G13270009	Diodes晶振	SaRonix-eCera™ G1	kHz Crystal (Tuning Fork)	32.768kHz	-
G93270001	Diodes晶振	SaRonix-eCera™ G9	kHz Crystal (Tuning Fork)	32.768kHz	-
G93270001	Diodes晶振	SaRonix-eCera™ G9	kHz Crystal (Tuning Fork)	32.768kHz	-
G93270001	Diodes晶振	SaRonix-eCera™ G9	kHz Crystal (Tuning Fork)	32.768kHz	-
G23270023	Diodes晶振	SaRonix-eCera™ G2	kHz Crystal (Tuning Fork)	32.768kHz	-
G23270006	Diodes晶振	SaRonix-eCera™ G2	kHz Crystal (Tuning Fork)	32.768kHz	-
G23270013	Diodes晶振	SaRonix-eCera™ G2	kHz Crystal (Tuning Fork)	32.768kHz	-
G43270021	Diodes晶振	SaRonix-eCera™ G4	kHz Crystal (Tuning Fork)	32.768kHz	-
G43270021	Diodes晶振	SaRonix-eCera™ G4	kHz Crystal (Tuning Fork)	32.768kHz	-
G43270021	Diodes晶振	SaRonix-eCera™ G4	kHz Crystal (Tuning Fork)	32.768kHz	-
G33270007	Diodes晶振	SaRonix-eCera™ G3	kHz Crystal (Tuning Fork)	32.768kHz	-
G33270007	Diodes晶振	SaRonix-eCera™ G3	kHz Crystal (Tuning Fork)	32.768kHz	-
G33270007	Diodes晶振	SaRonix-eCera™ G3	kHz Crystal (Tuning Fork)	32.768kHz	-
G83270021	Diodes晶振	SaRonix-eCera™ G8	kHz Crystal (Tuning Fork)	32.768kHz	-
G83270021	Diodes晶振	SaRonix-eCera™ G8	kHz Crystal (Tuning Fork)	32.768kHz	-

通过不断成长的亚陶公司,致力于向用户提供高性能低损耗的贴片石英晶体元器件,凭着自身独有的创新能力,开发出小尺寸,高精度的晶体元器件,与此同时吸引了无数用户前来采购。风靡一时的Diodes谐振器FL400WFQA1,为何能留下不可磨灭的记忆?ECERA无源晶振

Diodes公司（纳斯达克股票代码：DIOD）推出PAM8907压电发声器驱动器，用于最大限度地提高陶瓷/压电发声器的声压级 (SPL) 传递。PAM8907 具有内置同步升压转换器，可在电池供电系统中扩展SPL，并优于其他类似的发声器驱动器。该设备经过优化，可用于无线跟踪器、工业报警系统、医疗设备和家用电器。

G83270021	Diodes晶振	SaRonix-eCera™ G8	kHz Crystal (Tuning Fork)	32.768kHz	-
G43270025	Diodes晶振	SaRonix-eCera™ G4	kHz Crystal (Tuning Fork)	32.768kHz	-
G43270025	Diodes晶振	SaRonix-eCera™ G4	kHz Crystal (Tuning Fork)	32.768kHz	-
G43270025	Diodes晶振	SaRonix-eCera™ G4	kHz Crystal (Tuning Fork)	32.768kHz	-
G83270022	Diodes晶振	SaRonix-eCera™ G8	kHz Crystal (Tuning Fork)	32.768kHz	-
G83270022	Diodes晶振	SaRonix-eCera™ G8	kHz Crystal (Tuning Fork)	32.768kHz	-
G83270022	Diodes晶振	SaRonix-eCera™ G8	kHz Crystal (Tuning Fork)	32.768kHz	-
G43270019	Diodes晶振	SaRonix-eCera™ G4	kHz Crystal (Tuning Fork)	32.768kHz	-
G43270019	Diodes晶振	SaRonix-eCera™ G4	kHz Crystal (Tuning Fork)	32.768kHz	-
G43270019	Diodes晶振	SaRonix-eCera™ G4	kHz Crystal (Tuning Fork)	32.768kHz	-
G83270023	Diodes晶振	SaRonix-eCera™ G8	kHz Crystal (Tuning Fork)	32.768kHz	-
G83270023	Diodes晶振	SaRonix-eCera™ G8	kHz Crystal (Tuning Fork)	32.768kHz	-
G83270023	Diodes晶振	SaRonix-eCera™ G8	kHz Crystal (Tuning Fork)	32.768kHz	-
G83270025	Diodes晶振	SaRonix-eCera™ G8	kHz Crystal (Tuning Fork)	32.768kHz	-
G83270025	Diodes晶振	SaRonix-eCera™ G8	kHz Crystal (Tuning Fork)	32.768kHz	-
G83270025	Diodes晶振	SaRonix-eCera™ G8	kHz Crystal (Tuning Fork)	32.768kHz	-
G33270010	Diodes晶振	SaRonix-eCera™ G3	kHz Crystal (Tuning Fork)	32.768kHz	-
G33270010	Diodes晶振	SaRonix-eCera™ G3	kHz Crystal (Tuning Fork)	32.768kHz	-
G33270010	Diodes晶振	SaRonix-eCera™ G3	kHz Crystal (Tuning Fork)	32.768kHz	-
FL520WFMT1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	52MHz	±17ppm
FL520WFMT1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	52MHz	±17ppm
FL520WFMT1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	52MHz	±17ppm

百利通亚陶晶振公司这款PAM8907发声器驱动器支持1.8V至5.5V的宽输入电压范围，使其能够满足各种潜在应用的需求。可以选择22V PP或 31V PP输出值（使用 GPIO），从而提供两种不同的 SPL 选项，从而优化SPL或电池运行时间的性能。其集成升压转换器仅需要一个 1.0µH 外部电感器，有助于降低材料清单成本和电路板空间。

FL374WFMR1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	37.4MHz	±10ppm
FL374WFMR1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	37.4MHz	±10ppm
FL374WFMR1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	37.4MHz	±10ppm
FL374WFBR1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	37.4MHz	±10ppm
FL374WFBR1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	37.4MHz	±10ppm
FL374WFBR1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	37.4MHz	±10ppm
FL260WFMT1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	26MHz	±17ppm
FL260WFMT1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	26MHz	±17ppm
FL260WFMT1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	26MHz	±17ppm
FL384WFIN1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	38.4MHz	±12ppm
FL384WFIN1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	38.4MHz	±12ppm
FL384WFIN1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	38.4MHz	±12ppm
FL400WFMR1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	40MHz	±10ppm
FL400WFMR1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	40MHz	±10ppm
FL400WFMR1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	40MHz	±10ppm
FL400WFQA1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	40MHz	±10ppm
FL400WFQA1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	40MHz	±10ppm
FL400WFQA1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	40MHz	±10ppm
FL400WFMT1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	40MHz	±17ppm
FL400WFMT1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	40MHz	±17ppm
FL400WFMT1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	40MHz	±17ppm
FL260WFMR1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	26MHz	±10ppm
FL260WFMR1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	26MHz	±10ppm
FL260WFMR1	Diodes晶振	SaRonix-eCera™ FL	MHz Crystal	26MHz	±10ppm

相对来说与石英晶体谐振器相比,亚陶其他产品更加优势.自动关断和唤醒功能有助于进一步延长PAM8907发声器驱动器的运行时间，当它集成到电池供电系统中时，在关断模式下消耗的电流小于 1μA。包括热关断、过流和过压保护以及欠压锁定机制，以确保可靠运行。该产品的工作环境温度范围为 -40°C 至 +125°C。

PAM8907压电发声器驱动器采用紧凑的10引脚U-QFN2020封装，占用空间极小。