带电压且CMOS输出的普通有源晶振X1G005601017300
带电压且CMOS输出的普通有源晶振X1G005601017300,近年来,由衷感受到人工智能,5G通信,物联网等带来的震撼和便利,而这些产品的推出,其核心都离不开那颗被称之为心脏的晶振,晶振对于很多电子产品来说都是福音一般的存在,能够解决产品的稳定性能以及耐压性能,我们都知道在有源晶体振荡器的世界里,自从诞生以来就一直在通信、电子、航海航空航天及医学等领域扮演重要的角色,具有广泛的用途。在无线电技术发展的初期,它就在发射机中用来产生高频载波电压,在超外差接收机中用作本机振荡器,成为发射和接收设备的基本部件。
Product Number |
爱普生晶振型号 |
Frequency | LxWxH | Output Wave | Supply Voltage | Ope Temperature | Freq. Tol. | I [Max] |
X1G005601014400 | SG-8018CG | 3.686400 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601014500 | SG-8018CG | 3.686400 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601014600 | SG-8018CG | 49.152000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601014700 | SG-8018CG | 4.194304 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601014800 | SG-8018CG | 16.483200 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601014900 | SG-8018CG | 51.840000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005601015000 | SG-8018CG | 77.760000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.9 mA |
X1G005601015100 | SG-8018CG | 12.800000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601015200 | SG-8018CG | 1.024000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601015300 | SG-8018CG | 0.819200 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601015400 | SG-8018CG | 37.125000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601015500 | SG-8018CG | 148.500000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 8.1 mA |
X1G005601015600 | SG-8018CG | 74.250000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005601015700 | SG-8018CG | 13.225600 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601015800 | SG-8018CG | 104.857600 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 6.7 mA |
X1G005601015900 | SG-8018CG | 9.900000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601016000 | SG-8018CG | 18.430000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601016500 | SG-8018CG | 35.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601016600 | SG-8018CG | 15.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601016700 | SG-8018CG | 9.830400 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601016800 | SG-8018CG | 9.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601016900 | SG-8018CG | 2.097000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601017000 | SG-8018CG | 6.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601017100 | SG-8018CG | 11.059200 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601017200 | SG-8018CG | 9.900000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601017300 | SG-8018CG | 12.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601017400 | SG-8018CG | 33.500000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
爱普生的这款SG-8018CG晶振,普通有源晶振编码X1G005601017300,频率12.000000兆赫,输出WaveCMOS,供电电压1.62至3.63 V,尺寸(长×宽×高)2.50 × 2.00 × 0.80毫米,工作温度-40到+105°C,频率公差±50ppm,额外的OptionsN /,OSC TypeProgrammable Clock时钟OSC,具有非常高的稳定性,非常适用于智能穿戴设备设计,小体积,高精度,低功耗的特性以及优良的耐热性与耐环境特性,成为智能穿戴设备时钟的最佳之选.
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